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M R Melloch
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Molecular beam epitaxy
Thin film
Annealing
Quantum well
Bipolar junction transistor
Magnetic field
Wide-bandgap semiconductor
Band gap
Arsenic
Photorefractive effect
Semiconductor device
Holography
Ohmic contact
Fabrication
Voltage
Electron
Ion implantation
Generally Accepted Auditing Standards
Oscillation
Superlattice
Schottky diode
Room temperature
Quantum dot
Temperature
Gallium arsenide
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Molecular beam epitaxy
Thin film
Annealing
Quantum well
Bipolar junction transistor
Magnetic field
Wide-bandgap semiconductor
Band gap
Arsenic
Photorefractive effect
Semiconductor device
Holography
Ohmic contact
Fabrication
Voltage
Electron
Ion implantation
Generally Accepted Auditing Standards
Oscillation
Superlattice
Schottky diode
Room temperature
Quantum dot
Temperature
Gallium arsenide
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M R Melloch
Massachusetts Institute Of Technology
617
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