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P M Asbeck
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Voltage
Bipolar junction transistor
Radio frequency
Gallium arsenide
Linearity
Fabrication
Electronic circuit
RF power amplifier
Power-added efficiency
Wide-bandgap semiconductor
Code division multiple access
Silicon
Field-effect transistor
Index term
Heterojunction bipolar transistor
Network switch
Logic gate
Amplifier
Bandwidth
Integrated circuit
Electricity generation
Doping
Transmitter
CMOS
Silicon on insulator
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Voltage
Bipolar junction transistor
Radio frequency
Gallium arsenide
Linearity
Fabrication
Electronic circuit
RF power amplifier
Power-added efficiency
Wide-bandgap semiconductor
Code division multiple access
Silicon
Field-effect transistor
Index term
Heterojunction bipolar transistor
Network switch
Logic gate
Amplifier
Bandwidth
Integrated circuit
Electricity generation
Doping
Transmitter
CMOS
Silicon on insulator
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P M Asbeck
University Of California San Diego
576
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