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M J Ludowise
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Light-emitting diode
Electroluminescence
Energy transformation
Gallium arsenide
Spectrum
Room temperature
Arsenic
Semiconductor device
Electrical resistivity and conductivity
Superlattice
Group 2 organometallic chemistry
Fabrication
Crystal growth
Crystal structure
Current density
Heterojunction
Energy level
Quantum well
Activation energy
Indexation
Band gap
Quantum efficiency
Epitaxy
Nitrogen
Dislocation
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Light-emitting diode
Electroluminescence
Energy transformation
Gallium arsenide
Spectrum
Room temperature
Arsenic
Semiconductor device
Electrical resistivity and conductivity
Superlattice
Group 2 organometallic chemistry
Fabrication
Crystal growth
Crystal structure
Current density
Heterojunction
Energy level
Quantum well
Activation energy
Indexation
Band gap
Quantum efficiency
Epitaxy
Nitrogen
Dislocation
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M J Ludowise
Varian Associates
153
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