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W Kopp
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Electron mobility
High frequency
Electric field
Temperature
Heterojunction
High-electron-mobility transistor
Crystal growth
Field-effect transistor
Monolithic microwave integrated circuit
Electron
Quantum well
Schottky barrier
Doping
Superlattice
Amplifier
Power-added efficiency
Gallium arsenide
Electricity generation
Extremely high frequency
Schottky diode
Voltage
Equivalent circuit
Molecular beam epitaxy
Room temperature
Noise figure
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Electron mobility
High frequency
Electric field
Temperature
Heterojunction
High-electron-mobility transistor
Crystal growth
Field-effect transistor
Monolithic microwave integrated circuit
Electron
Quantum well
Schottky barrier
Doping
Superlattice
Amplifier
Power-added efficiency
Gallium arsenide
Electricity generation
Extremely high frequency
Schottky diode
Voltage
Equivalent circuit
Molecular beam epitaxy
Room temperature
Noise figure
Paper Recommendation
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Match this author profile with one of the following researchers:
Author Name
Affiliation
Papers
W Kopp
Syracuse University
102
W Kopp
University Of Vienna
1
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